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1. WO2021006105 - TERAHERTZ DEVICE

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Publication Number WO/2021/006105
Publication Date 14.01.2021
International Application No. PCT/JP2020/025601
International Filing Date 30.06.2020
IPC
H03B 7/08 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
7Generation of oscillations using active element having a negative resistance between two of its electrodes
02with frequency-determining element comprising lumped inductance and capacitance
06active element being semiconductor device
08being a tunnel diode
H01L 29/872 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
872Schottky diodes
H01L 21/329 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
329the devices comprising one or two electrodes, e.g. diodes
H01L 29/88 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
88Tunnel-effect diodes
H01L 29/866 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
866Zener diodes
H01L 29/864 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
864Transit-time diodes, e.g. IMPATT, TRAPATT diodes
Applicants
  • ローム株式会社 ROHM CO., LTD. [JP]/[JP]
Inventors
  • 外山　智一郎 TOYAMA Tomoichiro
  • 鶴田　一魁 TSURUDA Kazuisao
Agents
  • 恩田　誠 ONDA Makoto
  • 恩田　博宣 ONDA Hironori
Priority Data
2019-12620005.07.2019JP
2019-12620105.07.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) TERAHERTZ DEVICE
(FR) DISPOSITIF TÉRAHERTZ
(JA) テラヘルツ装置
front page image
Abstract
(EN)
This terahertz device includes a base material, a terahertz element, an antenna base, and a reflective film. The terahertz element is attached to the base material and generates electromagnetic waves. The antenna base is provided in a position facing the base material, and includes an antenna surface. The reflective film is formed on the antenna surface, and reflects at least a portion of the electromagnetic waves generated by the terahertz element in one direction.
(FR)
Ce dispositif térahertz comprend un matériau de base, un élément térahertz, une base d'antenne et un film réfléchissant. L'élément térahertz est fixé au matériau de base et génère des ondes électromagnétiques. La base d'antenne est disposée dans une position faisant face au matériau de base, et comprend une surface d'antenne. Le film réfléchissant est formé sur la surface d'antenne, et réfléchit au moins une partie des ondes électromagnétiques générées par l'élément térahertz dans une direction.
(JA)
テラヘルツ装置は、基材とテラヘルツ素子とアンテナベースと反射膜とを含む。テラヘルツ素子は、基材に取り付けられ、電磁波を発生させる。アンテナベースは、基材と対向する位置に設けられ、アンテナ面を有する。反射膜は、アンテナ面に形成され、テラヘルツ素子から発生した電磁波の少なくとも一部を一方向に向けて反射させる。
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