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1. WO2021003904 - PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF

Publication Number WO/2021/003904
Publication Date 14.01.2021
International Application No. PCT/CN2019/115202
International Filing Date 04.11.2019
IPC
H01L 45/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H01L 27/24 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
CPC
H01L 27/2463
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
2463Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays, details of the horizontal layout
H01L 45/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
06based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
H01L 45/1293
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
12Details
128Thermal details
1293Thermal insulation means
H01L 45/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
16Manufacturing
Applicants
  • 中国科学院上海微系统与信息技术研究所 SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES [CN]/[CN]
Inventors
  • 宋志棠 SONG, Zhitang
  • 宋三年 SONG, Sannian
Agents
  • 上海光华专利事务所(普通合伙) J. Z. M. C. PATENT AND TRADEMARK LAW OFFICE (GENERAL PARTNERSHIP)
Priority Data
201910610965.508.07.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF
(FR) MÉMOIRE À CHANGEMENT DE PHASE ET SON PROCÉDÉ DE FABRICATION
(ZH) 一种相变存储器及其制作方法
Abstract
(EN)
The present invention provides a phase change memory and a manufacturing method thereof. The phase change memory comprises a substrate, multiple phase change memory cells, and an isolation material layer. The multiple phase change memory cells are separately provided on the substrate, and sequentially comprise, from bottom to top, a first electrode material layer, a first transition material layer, a threshold switching transistor material layer, a second transition material layer, a second electrode material layer, a third transition material layer, a phase change material layer, a fourth transition material layer, and a third electrode material layer. The isolation material layer is located on the substrate, and surrounds a side surface of the phase change memory cell. The phase change memory cells are isolated from each other by means of the isolation material layer. In the phase change memory of the present invention, a phase change material and an OTS material are confined in the same space by an isolation material, and the transition material layer is located between the phase change material and an electrode material, between the phase change material and the OTS material, and between the OTS material and the electrode material, such that the phase change memory is high-density and high-speed, reduces power consumption, and has a long service life.
(FR)
La présente invention concerne une mémoire à changement de phase et son procédé de fabrication. La mémoire à changement de phase comprend un substrat, de multiples cellules de mémoire à changement de phase et une couche de matériau d'isolation. Les multiples cellules de mémoire à changement de phase sont disposées séparément sur le substrat, et comprennent séquentiellement, de bas en haut, une première couche de matériau d'électrode, une première couche de matériau de transition, une couche de matériau de transistor à commutation de seuil, une deuxième couche de matériau de transition, une deuxième couche de matériau d'électrode, une troisième couche de matériau de transition, une couche de matériau à changement de phase, une quatrième couche de matériau de transition et une troisième couche de matériau d'électrode. La couche de matériau d'isolation est située sur le substrat et entoure une surface latérale de la cellule de mémoire à changement de phase. Les cellules de mémoire à changement de phase sont isolées les unes des autres au moyen de la couche de matériau d'isolation. Dans la mémoire à changement de phase de la présente invention, un matériau à changement de phase et un matériau OTS sont confinés dans le même espace par un matériau d'isolation, et la couche de matériau de transition est située entre le matériau à changement de phase et un matériau d'électrode, entre le matériau à changement de phase et le matériau OTS, et entre le matériau OTS et le matériau d'électrode, de telle sorte que la mémoire à changement de phase est à densité élevée et à vitesse élevée, réduit la consommation d'énergie, et a une longue durée de vie.
(ZH)
本发明提供一种相变存储器及其制作方法,该相变存储器包括衬底、多个相变存储器单元及隔离材料层,其中,多个相变存储器单元分立设置于衬底上,自下而上依次包括第一电极材料层、第一过渡材料层、阈值选通管材料层、第二过渡材料层、第二电极材料层、第三过渡材料层、相变材料层、第四过渡材料层及第三电极材料层;隔离材料层位于衬底上,并包围相变存储器单元的侧面,各个相变存储器单元之间通过隔离材料层相互隔离。本发明的相变存储器中,相变材料与OTS材料被隔离材料限制在同一个空间中,过渡材料层位于相变材料与电极材料之间、相变材料与OTS材料之间、OTS材料与电极材料之间,使得相变存储器具有高密度、高速、低功耗和长寿命的特点。
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