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1. WO2020231108 - LIGHT EMITTING CHIP

Publication Number WO/2020/231108
Publication Date 19.11.2020
International Application No. PCT/KR2020/006115
International Filing Date 08.05.2020
IPC
H01L 33/48 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
CPC
H01L 23/3171
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
3157Partial encapsulation or coating
3171the coating being directly applied to the semiconductor body, e.g. passivation layer
H01L 25/0756
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0756Stacked arrangements of devices
H01L 27/153
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
H01L 33/62
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Applicants
  • SEOUL VIOSYS CO., LTD. [KR]/[KR]
Inventors
  • JANG, Jong Min
  • KIM, Chang Yeon
  • YANG, Myoung Hak
Agents
  • AIP PATENT & LAW FIRM
Priority Data
16/852,52219.04.2020US
62/847,85214.05.2019US
62/869,97202.07.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) LIGHT EMITTING CHIP
(FR) PUCE ÉLECTROLUMINESCENTE
Abstract
(EN)
A light emitting chip including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a passivation layer disposed on the third LED sub-unit, and a first connection electrode electrically connected to at least one of the first, second, and third LED sub-units, in which the first connection electrode and the third LED sub-unit form a first angle defined between an upper surface of the third LED sub-unit and an inner surface of the first connection electrode that is less than about 80°.
(FR)
L'invention concerne une puce électroluminescente comprenant une première sous-unité de DEL, une deuxième sous-unité de DEL disposée sur la première sous-unité de DEL, une troisième sous-unité de DEL disposée sur la deuxième sous-unité de DEL, une couche de passivation disposée sur la troisième sous-unité de DEL, et une première électrode de connexion connectée électriquement à au moins l'une des première, deuxième et troisième sous-unités de DEL, la première électrode de connexion et la troisième sous-unité de DEL formant un premier angle défini entre une surface supérieure de la troisième sous-unité de DEL et une surface intérieure de la première électrode de connexion qui est inférieure à environ 80°.
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