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1. WO2020230771 - MAGNETIC DOMAIN WALL MOVING ELEMENT AND MAGNETIC RECORDING ARRAY

Publication Number WO/2020/230771
Publication Date 19.11.2020
International Application No. PCT/JP2020/018894
International Filing Date 12.05.2020
IPC
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H01L 43/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10Selection of materials
H01L 21/8239 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
H01L 27/105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
H01L 29/82 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
82controllable by variation of the magnetic field applied to the device
Applicants
  • TDK株式会社 TDK CORPORATION [JP]/[JP]
Inventors
  • 篠原 哲人 SHINOHARA Tetsuhito
  • 芦田 拓也 ASHIDA Takuya
  • 柴田 竜雄 SHIBATA Tatsuo
Agents
  • 棚井 澄雄 TANAI Sumio
  • 荒 則彦 ARA Norihiko
  • 飯田 雅人 IIDA Masato
  • 荻野 彰広 OGINO Akihiro
Priority Data
2019-09286716.05.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MAGNETIC DOMAIN WALL MOVING ELEMENT AND MAGNETIC RECORDING ARRAY
(FR) ÉLÉMENT DE DÉPLACEMENT DE PAROI DE DOMAINE MAGNÉTIQUE ET RÉSEAU D'ENREGISTREMENT MAGNÉTIQUE
(JA) 磁壁移動素子及び磁気記録アレイ
Abstract
(EN)
A magnetic domain wall moving element of the present embodiment comprises: a magnetic recording layer that extends in a first direction and includes a ferromagnetic body; and a first electrically conductive layer and a second electrically conductive layer each connected to the magnetic recording layer and spaced apart from each other. The first electrically conductive layer has a ferromagnetic first layer that contacts the magnetic recording layer. The first layer has a mixing layer at the interface with the magnetic recording layer, and the mixing layer is a mixture of the ferromagnetic body and a dissimilar metal. The dissimilar metal is a metal that is different from the ferromagnetic body that mainly constitutes the first layer, and from the ferromagnetic body that mainly constitutes the magnetic recording layer.
(FR)
Un élément mobile de paroi de domaine magnétique du présent mode de réalisation selon la présente invention comprend : une couche d'enregistrement magnétique qui s'étend dans une première direction et comprend un corps ferromagnétique ; et une première couche électriquement conductrice et une seconde couche électriquement conductrice, chacune connectée à la couche d'enregistrement magnétique et espacée l'une de l'autre. La première couche électriquement conductrice comporte une première couche ferromagnétique qui est en contact avec la couche d'enregistrement magnétique. La première couche a une couche de mélange à l'interface avec la couche d'enregistrement magnétique, et la couche de mélange est un mélange du corps ferromagnétique et d'un métal différent. Le métal dissemblable est un métal différent du corps ferromagnétique qui constitue principalement la première couche, et à partir du corps ferromagnétique qui constitue principalement la couche d'enregistrement magnétique.
(JA)
本実施形態にかかる磁壁移動素子は、第1方向に延び、強磁性体を含む磁気記録層と、前記磁気記録層にそれぞれ離間して接続された第1導電層と第2導電層と、を備え、前記第1導電層は、前記磁気記録層と接する強磁性の第1層を有し、前記第1層は、前記磁気記録層との界面にミキシング層を有し、前記ミキシング層は強磁性体と異種金属とが混在しており、前記異種金属は、前記第1層を主として構成する強磁性体と前記磁気記録層を主として構成する強磁性体とのそれぞれと、異なる金属である。
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