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1. WO2020230349 - SEMICONDUCTOR MODULE

Publication Number WO/2020/230349
Publication Date 19.11.2020
International Application No. PCT/JP2019/044173
International Filing Date 11.11.2019
IPC
H01L 23/29 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
29characterised by the material
H01L 23/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
31characterised by the arrangement
H01L 25/07 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/78
H01L 25/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
Applicants
  • トヨタ自動車株式会社 TOYOTA JIDOSHA KABUSHIKI KAISHA [JP]/[JP]
Inventors
  • 田中 淳二 TANAKA Junji
Agents
  • 特許業務法人 快友国際特許事務所 KAI-U PATENT LAW FIRM
Priority Data
2019-09119714.05.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR MODULE
(FR) MODULE SEMI-CONDUCTEUR
(JA) 半導体モジュール
Abstract
(EN)
This semiconductor module comprises a semiconductor element and a sealing body that seals the semiconductor element. The semiconductor element includes: a semiconductor substrate; a protective film that is formed on a surface of the semiconductor substrate and extends in a bezel-like shape along the outer peripheral edge of the semiconductor substrate; a metal film that is formed on the surface of the semiconductor substrate, at least a portion of the metal film being positioned between the semiconductor substrate and the protective film; and a dummy metal film that is formed on the surface of the semiconductor substrate and is positioned between the metal film and the outer peripheral edge of the protective film. A recessed portion that accommodates a portion of the dummy metal film is formed on the surface of the semiconductor substrate. A recessed portion or a hole that opposes the recessed portion of the semiconductor substrate and accommodates the portion of the dummy metal film is formed on the protective film. That is, the dummy metal film is provided over both the recessed portion of the semiconductor substrate and the recessed portion or hole of the protective film.
(FR)
L'invention concerne un module semi-conducteur comprenant un élément semi-conducteur et un corps d'étanchéité qui scelle l'élément semi-conducteur. L'élément semi-conducteur comprend : un substrat semi-conducteur ; un film de protection qui est formé sur une surface du substrat semi-conducteur et s'étend dans une forme de type lunette le long du bord périphérique extérieur du substrat semi-conducteur ; un film métallique qui est formé sur la surface du substrat semi-conducteur, au moins une partie du film métallique étant positionnée entre le substrat semi-conducteur et le film de protection ; et un film métallique factice qui est formé sur la surface du substrat semi-conducteur et est positionné entre le film métallique et le bord périphérique externe du film de protection. Une partie évidée qui reçoit une partie du film métallique factice est formée sur la surface du substrat semi-conducteur. Une partie évidée ou un trou qui fait face à la partie évidée du substrat semi-conducteur et reçoit la partie du film métallique factice est formé sur le film de protection. Autrement dit, le film métallique factice est disposé sur la partie évidée du substrat semi-conducteur et la partie évidée ou le trou du film de protection.
(JA)
半導体モジュールは、半導体素子と、半導体素子を封止する封止体とを備える。半導体素子は、半導体基板と、半導体基板の表面上に設けられているとともに、半導体基板の外周縁に沿って枠状に延びる保護膜と、半導体基板の表面上に設けられているとともに、少なくとも一部が半導体基板と保護膜との間に位置する金属膜と、半導体基板の表面上に設けられているとともに、金属膜と保護膜の外周縁との間に位置するダミー金属膜とを備える。半導体基板の表面には、ダミー金属膜の一部を収容する凹部が設けられている。保護膜には、半導体基板の凹部に対向するとともに、ダミー金属膜の一部を収容する凹部又は穴が設けられている。即ち、ダミー金属膜は、半導体基板の凹部と保護膜の凹部又は穴との両者に亘って設けられている。
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