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1. WO2020179300 - SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD FOR SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

Publication Number WO/2020/179300
Publication Date 10.09.2020
International Application No. PCT/JP2020/003449
International Filing Date 30.01.2020
IPC
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 27/30 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
30with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H04N 5/369 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 兼田 有希央 KANEDA, Yukio
  • 久保井 信行 KUBOI, Nobuyuki
Agents
  • 特許業務法人酒井国際特許事務所 SAKAI INTERNATIONAL PATENT OFFICE
Priority Data
2019-03897404.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD FOR SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
(FR) DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEURS, PROCÉDÉ DE PRODUCTION DE DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEURS, ET APPAREIL ÉLECTRONIQUE
(JA) 固体撮像装置、固体撮像装置の製造方法および電子機器
Abstract
(EN)
This solid-state imaging device (1) comprises a photoelectric conversion part (30) that has a first electrode (31), a photoelectric conversion layer (34) that is electrically connected to the first electrode (31), and a second electrode (35) that is provided on a light-incidence-side surface of the photoelectric conversion layer (34). The photoelectric conversion layer (34) has a protruding region (34a) that protrudes from the second electrode (35) in plan view.
(FR)
Ce dispositif d'imagerie à semi-conducteurs (1) comprend une partie de conversion photoélectrique (30) qui a une première électrode (31), une couche de conversion photoélectrique (34) qui est électriquement connectée à la première électrode (31), et une seconde électrode (35) qui est disposée sur une surface côté incidence de lumière de la couche de conversion photoélectrique (34). La couche de conversion photoélectrique (34) a une région en saillie (34a) qui fait saillie à partir de la seconde électrode (35) dans une vue en plan.
(JA)
本開示に係る固体撮像装置(1)は、第1電極(31)と、第1電極(31)に電気的に接続される光電変換層(34)と、光電変換層(34)の光入射側の面に設けられる第2電極(35)と、を有する光電変換部(30)を備える。光電変換層(34)は、平面視において第2電極(35)からはみ出すはみ出し領域(34a)を有する。
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