Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020179057 - SEMICONDUCTOR CHIP MANUFACTURING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP

Publication Number WO/2020/179057
Publication Date 10.09.2020
International Application No. PCT/JP2019/009081
International Filing Date 07.03.2019
IPC
H01L 21/301 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301to subdivide a semiconductor body into separate parts, e.g. making partitions
B28D 5/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
28WORKING CEMENT, CLAY, OR STONE
DWORKING STONE OR STONE-LIKE MATERIALS
5Fine working of gems, jewels, crystals, e.g. of semiconductor material; Apparatus therefor
Applicants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 上辻 哲也 UETSUJI Tetsuya
  • 淵田 歩 FUCHIDA Ayumi
  • 鈴木 正人 SUZUKI Masato
Agents
  • 大岩 増雄 OIWA Masuo
  • 村上 啓吾 MURAKAMI Keigo
  • 竹中 岑生 TAKENAKA Mineo
  • 吉澤 憲治 YOSHIZAWA Kenji
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR CHIP MANUFACTURING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP
(FR) DISPOSITIF DE FABRICATION DE PUCE À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION DE PUCE À SEMI-CONDUCTEUR
(JA) 半導体チップ製造装置および半導体チップ製造方法
Abstract
(EN)
Provided are semiconductor chip manufacturing devices (10, 20, 30, 40) which fabricate a plurality of LD chips by dividing up a semiconductor wafer (5) which is installed in a housing (2) filled with liquids (1a, 1b, 1c), has partition lines (8) formed thereupon and marking lines (7) engraved thereupon, and has micro-cracks formed along the marking lines (7). The semiconductor chip manufacturing devices (10, 20, 30, 40) comprise: a support base (4) which holds the semiconductor wafer (5); and a blade (3) which applies pressure to the semiconductor wafer (5) along a crack portion (6) comprising the partition lines (8) or marking lines (7). The semiconductor wafer (5) is subjected to pressure along the crack portion (6) in the liquids (1a, 1b, 1c) by means of the blade (3), thereby dividing the wafer into a plurality of LD chips.
(FR)
L'invention concerne des dispositifs de fabrication de puce à semi-conducteur (10, 20, 30, 40) qui permettent de fabriquer une pluralité de puces LD par division d'une tranche semi-conductrice (5) qui est installée dans un boîtier (2) rempli de liquides (1a, 1b, 1c), présente des lignes de séparation (8) formées sur celle-ci et des lignes de marquage (7) gravées sur celle-ci, et présente des microfissures formées le long des lignes de marquage (7). Les dispositifs de fabrication de puces à semi-conducteur (10, 20, 30, 40) comprennent : une base de support (4) qui maintient la tranche semi-conductrice (5) ; et une lame (3) qui applique une pression sur la tranche semi-conductrice (5) le long d'une partie de fissure (6) comprenant les lignes de séparation (8) ou les lignes de marquage (7). La tranche semi-conductrice (5) est soumise à une pression le long de la partie de fissure (6) dans les liquides (1a, 1b, 1c) au moyen de la lame (3), divisant ainsi la tranche en une pluralité de puces LD.
(JA)
液体(1a、1b、1c)を充填した筐体(2)中に設置され、予め、区画線(8)が形成されるとともに罫書き線(7)が刻印され、当該罫書き線(7)に沿ってマイクロクラックが形成された半導体ウェハ(5)を分割して複数のLDチップを作製する半導体チップ製造装置(10、20、30、40)であって、前記半導体ウェハ(5)を保持する受け台(4)と、前記区画線(8)または前記罫書き線(7)で構成されるクラック部(6)に沿って前記半導体ウェハ(5)に加圧するブレード刃(3)と、を備え、前記半導体ウェハ(5)は、前記ブレード刃(3)により、前記液体(1a、1b、1c)中で前記クラック部(6)に沿って加圧されて複数のLDチップに分割される半導体チップ製造装置(10、20、30、40)とした。
Latest bibliographic data on file with the International Bureau