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1. WO2020178973 - METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND PROGRAM

Publication Number WO/2020/178973
Publication Date 10.09.2020
International Application No. PCT/JP2019/008550
International Filing Date 05.03.2019
IPC
H01L 21/314 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
CPC
H01L 21/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants
  • 株式会社KOKUSAI ELECTRIC KOKUSAI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 原田 和宏 HARADA Kazuhiro
  • 南 政克 MINAMI Masayoshi
  • 小倉 慎太郎 KOGURA Shintaro
  • 大谷 翔吾 OTANI Shogo
  • 橋本 良知 HASHIMOTO Yoshitomo
Agents
  • 福岡 昌浩 FUKUOKA Masahiro
  • 阿仁屋 節雄 ANIYA Setuo
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND PROGRAM
(FR) PROCÉDÉ DE PRODUCTION D’UN DISPOSITIF SEMI-CONDUCTEUR, PROGRAMME ET APPAREIL DE TRAITEMENT DE SUBSTRAT
(JA) 半導体装置の製造方法、基板処理装置、およびプログラム
Abstract
(EN)
The present invention comprises: (a) a step wherein a substrate, in which a conductive metal element-containing film is exposed in the surface, is carried into a processing chamber at a first temperature; (b) a step wherein a reducing gas is supplied to the substrate within the processing chamber, while heating the substrate to a second temperature that is higher than the first temperature; (c) a step wherein a first film is formed on the metal element-containing film by supplying a first processing gas, which does not contain an oxidizing gas, to the substrate within the processing chamber at the second temperature, said first film containing silicon and at least one of nitrogen and carbon, but not containing oxygen; and (d) a step wherein a second film is formed on the first film by supplying a second processing gas, which contains an oxidizing gas, to the substrate within the processing chamber at a third temperature that is higher than the first temperature, said second film containing silicon, oxygen, carbon and nitrogen and being thicker than the first film.
(FR)
La présente invention comprend : (a) une étape dans laquelle un substrat, dans lequel un film contenant un élément métallique conducteur est exposé dans la surface, est transporté dans une chambre de traitement à une première température ; (b) une étape dans laquelle un gaz réducteur est fourni au substrat à l'intérieur de la chambre de traitement, tout en chauffant le substrat à une seconde température qui est supérieure à la première température ; (c) une étape dans laquelle un premier film est formé sur le film contenant un élément métallique en fournissant un premier gaz de traitement, qui ne contient pas de gaz oxydant, au substrat à l'intérieur de la chambre de traitement à la seconde température, ledit premier film contenant du silicium et au moins un élément parmi l'azote et le carbone, mais ne contenant pas d'oxygène ; et (d) une étape dans laquelle un second film est formé sur le premier film en fournissant un second gaz de traitement, qui contient un gaz oxydant, au substrat à l'intérieur de la chambre de traitement à une troisième température qui est supérieure à la première température, ledit second film contenant du silicium, de l'oxygène, du carbone et de l'azote et étant plus épais que le premier film.
(JA)
(a)表面に導電性の金属元素含有膜が露出した基板を、第1温度下で処理室内へ搬入する工程と、(b)処理室内において、基板を第1温度よりも高い第2温度まで昇温させつつ、基板に対して還元ガスを供給する工程と、(c)処理室内において、第2温度下で、基板に対して酸化ガス非含有の第1処理ガスを供給することで、金属元素含有膜上に、シリコンと、窒素および炭素のうち少なくともいずれかと、を含み酸素非含有の第1膜を形成する工程と、(d)処理室内において、第1温度よりも高い第3温度下で、基板に対して酸化ガスを含む第2処理ガスを供給することで、第1膜上に、シリコン、酸素、炭素、および窒素を含む第2膜を第1膜よりも厚く形成する工程と、を有する。
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