Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020177056 - THIN FILM TRANSISTOR AND MANUFACTURE METHOD THEREFOR

Publication Number WO/2020/177056
Publication Date 10.09.2020
International Application No. PCT/CN2019/076870
International Filing Date 04.03.2019
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
H01L 29/1033
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
1025Channel region of field-effect devices
1029of field-effect transistors
1033with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
H01L 29/66742
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
Inventors
  • 王治 WANG, Zhi
  • 袁广才 YUAN, Guangcai
  • 关峰 GUAN, Feng
  • 许晨 XU, Chen
  • 王学勇 WANG, Xueyong
  • 杜建华 DU, Jianhua
  • 李超 LI, Chao
  • 陈蕾 CHEN, Lei
Agents
  • 北京市中咨律师事务所 ZHONGZI LAW OFFICE
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) THIN FILM TRANSISTOR AND MANUFACTURE METHOD THEREFOR
(FR) TRANSISTOR À COUCHES MINCES ET SON PROCÉDÉ DE FABRICATION
(ZH) 薄膜晶体管及薄膜晶体管的制造方法
Abstract
(EN)
Disclosed are a thin film transistor and a manufacture method therefor. The thin film transistor comprises: a substrate; a first semiconductor layer, a gate dielectric layer and a gate electrode which are stacked successively on the substrate, wherein the first semiconductor layer has a first portion located in a channel region of the thin film transistor and a second portion located in the source/drain electrode region of the thin film transistor and at two sides of the first portion, the second portion and a first sub-portion of the first portion abutting the second portion include noncrystal semiconductor material, and a second sub-portion of the first portion located between the first sub-portion includes polycrystal semiconductor material; and a second semiconductor layer located in the source/drain electrode region and in contact with the second portion, the second semiconductor layer having a higher electrical conductivity than the noncrystal semiconductor material.
(FR)
La présente invention concerne un transistor à couches minces et son procédé de fabrication. Le transistor à couches minces comprend : un substrat ; une première couche semi-conductrice, une couche diélectrique de grille et une électrode de grille qui sont empilées successivement sur le substrat, la première couche semi-conductrice ayant une première partie située dans une région de canal du transistor à couches minces et une seconde partie située dans la région d'électrode de source/drain du transistor à couches minces et sur deux côtés de la première partie, la seconde partie et une première sous-partie de la première partie venant en butée contre la seconde partie comprennent un matériau semi-conducteur non cristallin, et une seconde sous-partie de la première partie située entre la première sous-partie comprend un matériau semi-conducteur polycristallin ; et une seconde couche semi-conductrice située dans la région d'électrode de source/drain et en contact avec la seconde partie, la seconde couche semi-conductrice ayant une conductivité électrique supérieure à celle du matériau semi-conducteur non cristallin.
(ZH)
一种薄膜晶体管及其制造方法。该薄膜晶体管包括:衬底;在衬底上依次层叠的第一半导体层、栅极介质层和栅极电极;其中,第一半导体层具有位于该薄膜晶体管的沟道区域中的第一部分和位于薄膜晶体管的源/漏极区域中且位于第一部分两侧的第二部分,并且其中,第二部分和第一部分的与第二部分邻接的第一子部分包括非晶半导体材料,第一部分的位于第一子部分之间的第二子部分包括多晶半导体材料;位于源/漏极区域的且与第二部分接触的第二半导体层,其中,该第二半导体层的导电性高于非晶半导体材料的导电性。
Also published as
CN201980000226.2
Latest bibliographic data on file with the International Bureau