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1. WO2020154442 - RF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Publication Number WO/2020/154442
Publication Date 30.07.2020
International Application No. PCT/US2020/014665
International Filing Date 22.01.2020
IPC
H01L 21/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56Encapsulations, e.g. encapsulating layers, coatings
H01L 23/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
31characterised by the arrangement
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
Applicants
  • QORVO US, INC. [US]/[US]
Inventors
  • COSTA, Julio, C.
  • CARROLL, Michael
  • MASON, Philip, W.
  • HATCHER, JR., Merrill, Albert
Agents
  • WITHROW, Benjamin, S.
Priority Data
16/678,57308.11.2019US
62/795,80423.01.2019US
62/866,86926.06.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) RF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
(FR) DISPOSITIF SEMI-CONDUCTEUR RADIOFRÉQUENCE ET SON PROCÉDÉ DE FABRICATION
Abstract
(EN)
The present disclosure relates to a radio frequency device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, a barrier layer, and a first mold compound. The FEOL portion includes isolation sections and an active layer surrounded by the isolation sections. The barrier layer formed of silicon nitride resides over the active layer and top surfaces of the isolation sections. The first mold compound resides over the barrier layer. Herein, silicon crystal does not exist between the first mold compound and the active layer. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the mold device die.
(FR)
La présente invention concerne un dispositif radiofréquence qui comprend une matrice de dispositif de moule et une structure de redistribution multicouche sous la matrice de dispositif de moule. La matrice de dispositif de moule comprend une région de dispositif ayant une partie de fin de ligne (BEOL) et une partie de ligne d'extrémité avant (FEOL) sur la partie BEOL, une couche barrière, et un premier composé de moule. La partie FEOL comprend des sections d'isolation et une couche active entourée par les sections d'isolation. La couche barrière formée de nitrure de silicium réside sur la couche active et les surfaces supérieures des sections d'isolation. Le premier composé de moule réside sur la couche barrière. Dans la présente invention, un cristal de silicium n'existe pas entre le premier composé de moule et la couche active. La structure de redistribution multicouche comprend un certain nombre de structures de bosse, qui sont au fond de la structure de redistribution multicouche et couplées électriquement à la partie FEOL de la matrice de dispositif de moule.
Also published as
Latest bibliographic data on file with the International Bureau