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1. WO2020129555 - HEAT-CONDUCTIVE SILICONE COMPOSITION AND SEMICONDUCTOR DEVICE

Publication Number WO/2020/129555
Publication Date 25.06.2020
International Application No. PCT/JP2019/046264
International Filing Date 27.11.2019
IPC
H01L 23/36 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
C08K 5/14 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUSE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
5Use of organic ingredients
04Oxygen-containing compounds
14Peroxides
C08K 5/5415 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUSE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
5Use of organic ingredients
54Silicon-containing compounds
541containing oxygen
5415containing at least one Si-O bond
C08K 5/5425 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUSE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
5Use of organic ingredients
54Silicon-containing compounds
541containing oxygen
5425containing at least one C=C bond
C08L 83/05 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
04Polysiloxanes
05containing silicon bound to hydrogen
C08L 83/07 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
04Polysiloxanes
07containing silicon bound to unsaturated aliphatic groups
Applicants
  • 信越化学工業株式会社 SHIN-ETSU CHEMICAL CO., LTD. [JP]/[JP]
Inventors
  • 秋場 翔太 AKIBA Shota
  • 山田 邦弘 YAMADA Kunihiro
  • 辻 謙一 TSUJI Kenichi
Agents
  • 特許業務法人牛木国際特許事務所 USHIKI & ASSOCIATES
Priority Data
2018-23896521.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) HEAT-CONDUCTIVE SILICONE COMPOSITION AND SEMICONDUCTOR DEVICE
(FR) COMPOSITION DE SILICONE THERMOCONDUCTRICE ET DISPOSITIF À SEMI-CONDUCTEUR
(JA) 熱伝導性シリコーン組成物及び半導体装置
Abstract
(EN)
Provided are a heat-conductive silicone composition having good heat dissipation characteristics, and a semiconductor device using the said composition. A heat-conductive silicone composition containing: (A) an organopolysiloxane expressed by average composition formula (1): Formula (1): R1 aSiO(4-a)/2 (In the formula, R1 represents a hydrogen atom, a C1-18 saturated or unsaturated univalent hydrocarbon group, or a hydroxy group, and a satisfies the expression 1.8 ≤ a ≤ 2.2), the organopolysiloxane having kinetic viscosity at 25°C of 10-100,000 mm2/s; (B) silver powder having a tapped density of 3.0 g/cm3 or more, a specific surface area of 2.0 m2/g or less, and an aspect ratio of 1-30; (C) elemental gallium and/or a gallium alloy having a melting point of 0-70°C, the mass ratio [component (C)/{component (B) + component (C)}] being 0.001-0.1; and (D) a catalyst selected from the group consisting of platinum catalysts, organic peroxides, and condensation reaction catalysts.
(FR)
L'invention concerne une composition de silicone thermoconductrice ayant de bonnes caractéristiques de dissipation de chaleur, et un dispositif à semi-conducteur utilisant ladite composition. L'invention concerne une composition de silicone thermoconductrice contenant : (A) un organopolysiloxane exprimé par la formule de composition moyenne (1) : Formule (1) : R1 aSiO(4-a)/2 (dans la formule, R1 représente un atome d'hydrogène , un groupe hydrocarboné univalent saturé ou insaturé en C1-18, ou un groupe hydroxy, et a satisfait l'expression 1,8 ≤ a ≤ 2,2), l'organopolysiloxane ayant une viscosité cinétique à 25°C de 10 à 100,000 mm2/s ; (B) une poudre d'argent ayant une densité tassée supérieure ou égale à 3,0 g/cm3, une surface spécifique inférieure ou égale à 2,0 m2/g, et un rapport d'aspect de 1 à 30 ; (C) ) du gallium élémentaire et/ou un alliage de gallium ayant un point de fusion de 0 à 70 °C, le rapport de masse [composant (C)/ {composant (B) + composant (C)}] étant de 0,001 à 0,1 ; et (D) un catalyseur choisi dans le groupe constitué par les catalyseurs au platine, les peroxydes organiques et les catalyseurs de réaction de condensation.
(JA)
良好な放熱特性を有する熱伝導性シリコーン組成物と、該組成物を用いた半導体装置の提供。 (A)下記平均組成式(1) R1aSiO(4-a)/2 (1) (式中、R1は、水素原子、炭素数1~18の飽和若しくは不飽和の一価炭化水素基、又はヒドロキシ基を示し、aは1.8≦a≦2.2である。) で表される、25℃における動粘度が10~100,000mm2/sのオルガノポリシロキサン (B)タップ密度が3.0g/cm3以上であり、比表面積が2.0m2/g以下であり、かつアスペクト比が、1~30である銀粉末 (C)融点が0~70℃の、ガリウム単体および/またはガリウム合金:質量比[成分(C)/{成分(B)+成分(C)}]は0.001~0.1 及び (D)白金系触媒、有機過酸化物及び縮合反応用触媒からなる群より選択される触媒 を含有する熱伝導性シリコーン組成物。
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