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1. WO2020129175 - SEMICONDUCTOR DEVICE

Publication Number WO/2020/129175
Publication Date 25.06.2020
International Application No. PCT/JP2018/046755
International Filing Date 19.12.2018
IPC
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
Applicants
  • サンケン電気株式会社 SANKEN ELECTRIC CO., LTD. [JP]/[JP]
Inventors
  • 田中 雄季 TANAKA Yuki
  • 鹿内 洋志 SHIKAUCHI Hiroshi
  • 鷲谷 哲 WASHIYA Satoru
  • 熊倉 弘道 KUMAKURA Hiromichi
Agents
  • 三好 秀和 MIYOSHI Hidekazu
  • 高橋 俊一 TAKAHASHI Shunichi
  • 伊藤 正和 ITO Masakazu
  • 高松 俊雄 TAKAMATSU Toshio
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置
Abstract
(EN)
Task #: 946 / Project: Abstracts JA-EN 199617 / Asset: pctjp2018046755-ttad-000001-en-ja.xml This semiconductor device comprises: a drift region (30) having an SJ structure that is placed on a semiconductor substrate (10), for which a first columnar region (31) of a first electrically conductive type and a second columnar region (32) of a second electrically conductive type are placed in alternating fashion; a base region (40) of the second electrically conductive type that is placed on the drift region (30); a source region (50) of the first electrically conductive type that is placed on the base region (40); and gate electrodes (80) placed inside grooves that pass through the source region (50) and the base region (40). The second columnar region (32) of the drift region (30) is formed with the recombination center density of holes and electrons higher in an upper region (32A) than in a lower region (32B).
(FR)
L'invention concerne un dispositif à semi-conducteur comprenant : une région de dérive (30) ayant une structure SJ qui est placée sur un substrat semi-conducteur (10), pour lequel une première région colonnaire (31) d'un premier type de conductivité électrique et une seconde région colonnaire (32) d'un second type de conductivité électrique sont disposées de manière alternée ; une région de base (40) du second type de conductivité électrique qui est placée sur la région de dérive (30) ; une région de source (50) du premier type de conductivité électrique qui est placée sur la région de base (40) ; et des électrodes de grille (80) placées à l'intérieur de rainures qui passent à travers la région de source (50) et la région de base (40). La seconde région colonnaire (32) de la région de dérive (30) est formée avec la densité centrale de recombinaison de trous et d'électrons plus haut dans une région supérieure (32A) que dans une région inférieure (32B).
(JA)
半導体装置は、半導体基板(10)上に配置された、第1導電型の第1柱状領域(31)と第2導電型の第2柱状領域(32)が交互に配置されたSJ構造のドリフト領域(30)と、ドリフト領域(30)の上に配置された第2導電型のベース領域(40)と、ベース領域(40)の上に配置された第1導電型のソース領域(50)と、ソース領域(50)及びベース領域(40)を貫通する溝の内部に配置されたゲート電極(80)を備える。ドリフト領域(30)の第2柱状領域(32)は、下部領域(32B)よりも上部領域(32A)において正孔と電子の再結合中心の密度が高く形成されている。
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